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BZX84B ICS874 DL472 MIW1235 ZXTN19 20JL2C41 WHE1K0FE 42376
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  inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1723 description drain current i d =12a@ t c =25 drain source voltage : v dss = 600v(min) fast switching speed applications power supplies, converters and power motor controls absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 600 v v gs gate-source voltage 30 v i d drain current-continuous@ t c =25 12 a p tot total dissipation@t c =25 150 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1723 electrical characteristics (t c =25 ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 1ma 600 v v gs (th ) gate threshold voltage v ds = v gs ; i d =1ma 1.5 3.5 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 6a 0.65 i gss gate-body leakage current v gs = 25v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 600v; v gs = 0 300 a pdf pdffactory pro www.fineprint.cn


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